Projects: Projects for Investigator |
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Reference Number | EP/G065462/1 | |
Title | InGaN-Alloy Materials for Improved Optoelectronic and Photovoltaic Applications | |
Status | Completed | |
Energy Categories | Renewable Energy Sources(Solar Energy, Photovoltaics) 50%; Energy Efficiency(Residential and commercial) 50%; |
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Research Types | Basic and strategic applied research 100% | |
Science and Technology Fields | PHYSICAL SCIENCES AND MATHEMATICS (Chemistry) 50%; PHYSICAL SCIENCES AND MATHEMATICS (Physics) 50%; |
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UKERC Cross Cutting Characterisation | Not Cross-cutting 100% | |
Principal Investigator |
Professor TS (Tim ) Jones No email address given Chemistry University of Warwick |
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Award Type | Standard | |
Funding Source | EPSRC | |
Start Date | 01 July 2009 | |
End Date | 31 December 2012 | |
Duration | 42 months | |
Total Grant Value | £1 | |
Industrial Sectors | No relevance to Underpinning Sectors | |
Region | West Midlands | |
Programme | Physical Sciences | |
Investigators | Principal Investigator | Professor TS (Tim ) Jones , Chemistry, University of Warwick (99.998%) |
Other Investigator | Professor CF McConville , Physics, University of Warwick (0.001%) Professor PA Thomas , Physics, University of Warwick (0.001%) |
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Web Site | ||
Objectives | ||
Abstract | III-Nitride quantum well (QW) heterostructures are used in a number of electronic devices including blue light emitting diodes (LEDs) and lasers. There is a significant worldwide effort to develop UV LEDs and lasers as well as UV-optical modulators, detectors, and emitters based on quantum cascade designs. These later devices are based primarily on AlGaInN multiple QWs. The development of such devices is important for many applications including solid state lighting, chemical and biological sensing and free-space optical communications. However, the growth as well as the crystal and electronic structure of InGaN alloys with high InN mole fraction are poorly understood and this limits the potential of these materials.The goal of the proposed collaborative research between groups at Boston University (BU) and the University of Warwick (UW), is to address and resolve problems related to the growth of InGaN alloys with high InN mole fraction and to study the crystal and electronic structure of such alloys and quantum structures. We believe that such an international synergistic effort between groups with complementary strengths and expertise will lead to the development of methods of controlling the growth at the atomic level and of designing InGaN quantum structures with controlled interface roughness and strain. The collaborative groups feature those of Moustakas and Ludwig at BU with Jones at UW focused on materials growth, Ludwig and Basu at BU with Thomas at UW focused on crystal structure, and Smith and Averitt at BU with McConville at UW focused on electronic and optoelectronic structure. The goal is to produce InGaN alloys and heterostructures with predictable and reproducible optoelectronic properties, in order to improve the efficiency of existing devices (green LEDs) and facilitate the development of a new generation of devices (green lasers and high efficiency solar cells). The proposed activities include research on state-of-the-art nitride alloy growth, study of alloy atomic structure and microstructure, study of the bulk and surface electronic structure of these alloys, and study of their optical characteristics. The optical transport and recombination properties will be investigated and correlations with the crystal structure and defects as well as the electronic structure will be established. Complexities of III-nitride QWs, such as large lattice mismatch, heavy effective masses, and strong internal electric fields due to polarization will also be investigated | |
Publications | (none) |
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Final Report | (none) |
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Added to Database | 07/11/11 |